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Polymer White Light-Emitting Diodes with p-Type Si Anode and Nanometer-Thick Polycrystalline p-Si Anode
GU Yongtao,WEI Feng,SUN Tuo,XU Wanjin,RAN Guangzhao,ZHANG Yong,NIU Qiaoli,QIN Guogang
Acta Scientiarum Naturalium Universitatis Pekinensis
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Ni-Enhanced Photoluminescence of Er
3
Dopedin Si-Rich Nitride
SUN Kai,XU Wanjin,RAN Guangzhao
Acta Scientiarum Naturalium Universitatis Pekinensis
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Er-doped Si-rich nitride ( SRN ∶Er) films and three-period superlattices of SRN ∶Er Ni were deposited by reactive magnetronsputtering technique and annealed at 1100 ℃. The photo luminescence spectra of SRN ∶Er films show two emission bands, one centered at 665~750 nm and another peaked at 1. 54μm, where the 665~750 nmone is due to Si nanocrystals in SRN and the 1. 54μmone is characteristic for Er3+. The photo luminescence spectra of the super lattices exhibit fine structures of 3 + Er light emission around 520, 550 and 850 nm and a 12-fold enhanced Er light emission at 1. 54 μm. The appearance of these fine structures indicates that the local environments around Er3 + become ordered and Er3+ is much more optically active in such ordered environments than in SRN ∶Er films. Raman-scattering spectra measurements demonstrate an increase in the number of Sinanocrystals. Therefore, the 12-fold enhancement at 1.54μmis a result of the enhancement in the Er3+ optical activation and the increase in the number of Si nanocrystals .
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